从固态组分控制方面，对ＡｌＧａＡｓ 的常压金属有机物气相外延（ＡＰ－ＭＯＶＰＥ）生长技术进行了研究．首先，在假定体系中所涉及气体为理想气体的前提下，经理论推导，给出了ＡｌＧａＡｓＡＰ－ＭＯＶＰＥ生长过程中控制参数和Ａｌ在固、气相间的分配系数ｋＡｌ之间的关系式．之后，依据该关系式分析实验数据，并对ｋＡｌ的动力学行为规律进行了研究．结果表明，ｋＡｌ值大小与ＡｌＡｓ 和ＧａＡｓ 的生长效率（单位ⅢＡ 族原子输入量下材料的生长速率）之比Ｋ 的大小有关：ｋＡｌ随Ｋ 的增加而增大；当Ｋ＞ １ 时，ｋＡｌ＞ １，当Ｋ＜ １ 时，ｋＡｌ＜ １，实际情况以前者居多；只有当Ｋ＝ １ 时才ｋＡｌ＝ １．此外，生成ＧａＡｓ和ＡｌＡｓ 的表观反应活化能Ｅａ１和Ｅａ２的不同会导致Ｋ，进而ｋＡｌ随生长温度发生变化：当Ｅａ１＞ Ｅａ２时，ｋＡｌ随生长温度的升高而减小，当Ｅａ１＜ Ｅａ２时，ｋＡｌ随生长温度的升高而增大，论文得到的结果属后种；只有当Ｅａ１＝ Ｅａ２时，ｋＡｌ才不随生长温度发生变化．再者，ｋＡｌ还会随Ａｌ在气相ⅢＡ 族原子中的原子百分含量ｘⅤＡｌ的增加而减小． From the aspect of solid component control, the atmospheric pressure metal organic vapor phase epitaxy (AP-MOVPE) growth of AlGaAs was studied. First, based on the assumption that the gas involved in the system is an ideal gas, the relationship between the control parameters and the partition coefficient kAl of Al in solid and gas phase during AlGaAsAP-MOVPE growth is given theoretically. Afterwards, the experimental data were analyzed according to the relationship and the kinetic behavior of kAl was studied. The results show that the value of kAl is related to the ratio K of the growth efficiency of AlAs and GaAs (the growth rate of the material in unit IIA atomic input): kAl increases with the increase of K; when K> 1, kAl> 1, when K <1, kAl <1, the actual situation in the former mostly; only when K = 1 kAl = 1. In addition, the difference of apparent activation energies Ea1 and Ea2 of GaAs and AlAs leads to K and, in turn, kAl changes with the growth temperature. When Ea1> Ea2, kAl decreases with the increase of growth temperature. When Ea1