论文部分内容阅读
我们用聚焦离子束(FIB)和变形电子束(EB)混合光刻工艺加工了高电子迁移率晶体管(HEMT)的蘑菇栅结构。在这项工艺中,先用FIB光刻将栅区域内的抗蚀剂减薄到大约0.2μm(“顶栅”的形成),然后用EB曝光顶栅的中心(“底栅”的形成)。用变形电子束在GaAs衬底上可重复地描绘出0.20～0.25μm的图形。经挖槽刻蚀和剥离工艺之后就得到了无衬底损伤的0.2μm蘑菇栅。FIB和EB曝光的套刻精度都优于0.2μm。
We fabricated a mushroom gate structure for a high electron mobility transistor (HEMT) using a hybrid ion beam (FIB) and a deformable electron beam (EB) hybrid lithography process. In this process, the resist in the gate region is first thinned by FIB lithography to about 0.2 μm (“top gate” formation) and then EB is used to expose the center of the top gate (“bottom gate” formation) . A 0.20 ~ 0.25μm pattern can be repetitively drawn on a GaAs substrate with a deformed electron beam. A 0.2 μm mushroom grid without substrate damage was obtained after the trench etching and stripping process. The enveloping accuracy of FIB and EB exposure are better than 0.2μm.