论文部分内容阅读
从真空热浸和电流冲击两个方面对碲镉汞红外探测器进行了研究。真空热浸在星载红外探测器中是十分重要的一项试验,通过研究得到大面积甚长波探测器芯片的耐真空热浸温度为85℃、95℃下39 h的热浸会降低探测器的性能;在电流冲击的实验中,得出低温下探测器芯片耐冲击能力低于室温下的探测器芯片,低温下40mA的脉冲电流会降低其性能,而室温下相应的脉冲电流为70mA。粘接胶的热导率和厚度是影响耐冲击能力的主要因素。
The HgCdTe infrared detectors were studied from the aspects of vacuum hot-dipping and current impact. Vacuum thermal immersion in the satellite-based infrared detector is a very important experiment, through the study of large area very long wave detector chip vacuum hot-dip temperature of 85 ℃, 39 ℃ at 95 ℃ hot dip will reduce the detector In the experiment of current impact, we found that the detector chip with lower impact resistance than the detector chip at low temperature, the pulse current of 40mA at low temperature will reduce its performance, and the corresponding pulse current at room temperature is 70mA. The thermal conductivity and thickness of the adhesive are the main factors that affect the impact resistance.