论文部分内容阅读
在Si和SiO_2基底上,采用热原子层沉积技术,以四(二甲基氨基)钛(Ti(N(CH_3)_2)_4)和三甲基铝(Al(CH_3)_3)为前驱体,制备TiAlCN薄膜。测试结果表明,随着基底温度的升高,膜层的沉积速率升高,电阻率降低,光学带隙由3.45 eV降低到2.00 e V,并在基底温度为300和350℃时出现了双吸收边;基底温度为350℃时,Al(CH_3)_3分解,使Al进入膜层与TiN和TiC形成TiAl N和TiAlC;膜层中TiN和TiC的形成,可以有效抑制膜层的自然氧化;基底温度为250和300℃时,薄膜为无定型结构,当基底温度为350℃时,有TiN晶体产生;膜层的表面粗糙度随着基底温度的升高先降低后升高,表面粗糙度的升高可能是因为在基底温度为350℃时前驱体材料的分解,使C—H键进入膜层所导致的。
On the Si and SiO 2 substrates, Ti (N (CH 3) _2) _4 and Al (CH_3) _3 precursors were deposited by the thermal atomic layer deposition technique. TiAlCN film was prepared. The results show that as the substrate temperature increases, the deposition rate of the film increases and the resistivity decreases, the optical band gap decreases from 3.45 eV to 2.00 eV and double absorption occurs at the substrate temperatures of 300 and 350 ° C ; When the substrate temperature is 350 ℃, Al (CH_3) _3 decomposes so that Al enters the film layer to form TiAl N and TiAlC with TiN and TiC; the formation of TiN and TiC in the film layer can effectively inhibit the natural oxidation of the film layer; When the temperature is 250 and 300 ℃, the film is amorphous. When the substrate temperature is 350 ℃, TiN crystal is produced. The surface roughness of the film first decreases and then increases with the increase of the substrate temperature. The surface roughness The increase may be due to decomposition of the precursor material at a substrate temperature of 350 ° C, resulting in the C-H bond entering the film.