InN film was grown on 4H-SiC(0001) substrate by RF plasma-assisted molecular beam epitaxy(RFMBE).Priorto the growth of InN film,an InN buffer layer with a thickness of ~5.5 nm was grown on the substrate.Surface morphology,microstructure and structural quality of InN film were investigated.Micro-structural defects,such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy(TEM).The results show that a high density of line contrasts,parallel to the growth direction(c-axis),was clearly observed in the grown InN film.Dark field TEM images recorded with diffraction vectors g =1120and g — 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface.This InN nucleation also led to a generation of anti-phase domains. InN film was grown on 4H-SiC (0001) substrate by RF plasma-assisted molecular beam epitaxy (RFMBE). Prism of the growth of InN film, an InN buffer layer with a thickness of ~ 5.5 nm was grown on the substrate. microstructure and structural quality of InN film were investigated. Micro-structural defects, such as stacking faults and anti-phase domain in InN film were carefully investigated using transmission electron microscopy (TEM). The results show that a high density of line contrasts, parallel to the growth direction (c-axis), was clearly observed in the grown InN film. Dark field TEM images recorded with diffraction vectors g = 1120 and g - 0002 revealed that such line contrasts evolved from a coalescence of the adjacent misoriented islands during the initial stage of the InN nucleation on the substrate surface. This InN nucleation also led to a generation of anti-phase domains.