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论述了一种采用数控精细扫描电压源的电容－电压（Ｃ－Ｖ）测量系统，利用该系统可以测量硅及砷化镓样品表面层的掺杂分布的精细结构，为半导体器件和集成电路芯片的设计与制造工艺的优化提供可靠的依据．测试系统采用ＰＣ微机作为主控机，配以接口模块、数据采集模块、控制模块及电容仪等，可使测量快速、准确地进行，并可使复杂的操作与计算过程完全自动化
A capacitance-voltage (C-V) measurement system using a finely-controlled scanning voltage source is described. The system can measure the fine structure of the doping distribution of the surface layers of silicon and gallium arsenide samples, and provides a method for the fabrication of semiconductor devices and integrated circuit chips The design and manufacturing process to provide a reliable basis for the optimization. The test system uses the PC microcomputer as the host computer, together with the interface module, the data acquisition module, the control module and the capacitance meter, etc., so that the measurement can be performed quickly and accurately and the complicated operation and calculation process can be fully automated