论文部分内容阅读
,A unified drain current 1/f noise model for GaN-based high electron mobility transistors
【机 构】
:
School of Microelectronics, Xidian University, Xi’an 710071, China
【出 处】
:
中国物理B(英文版)
【发表日期】
:
2014年2期
其他文献
,Strongly enhanced flux pinning in the YBa2Cu3O7-X films with the co-doping of BaTiO3 nanorod and Y2
新闻工作者应当学点专业技术知识,否则就会在稿子中闹笑话。例如,有的报道把磷酸说成是易燃易爆,生产过程中稍一疏忽都可能发生燃烧、爆炸。这是记者不好好学习,又不向内行
“您是北京晚报《古城纵横》的编辑吗?我是日本《读卖新闻》的驻华记者星野,我要给贵报送一份批评稿件,希望能刊登在《古城纵横》这个栏目里……”今年5月20日上午,北京晚报
,Employment of Jacobian elliptic functions for solving problems in nonlinear dynamics of microtubule
We investigate the dynamics of two interacting electrons confined in a quantum dot molecule under the influence of cosine squared electric fields. The condition
,The generalized planar fault energy, ductility, and twinnability of Al and Al-RE (RE =Sc, Y, Dy, Tb