等离子腐蚀对于半导体工艺来说是一种新的技术,在较低的成本下,根据成品率和分辨率的改进,这一技术可望有许多优点超过液体腐蚀方法。然而,按照所给出的相对腐蚀速率,选择可行的腐蚀剂是困难的,并限制其应用于某些材料上。迄今所采用的腐蚀剂对硅衬底上的二氧化硅膜腐蚀成窗口的情况是非常不利的。而在半导体工业上至今限制了等离子腐蚀的范围,这大概是主要的因素。本文的目的是报导这种技术的优点,它能大大抑制对硅的腐蚀,从而对硅和二氧化硅的相对腐蚀速率提供很好的控制。腐蚀工艺辉光放电等离子体通过一个用普通的泵抽气以维持工作压力在0.1和1乇之间的硼 Plasma etching is a new technology for semiconductor processes that is expected to outperform liquid etching methods at low cost, based on yield and resolution improvements. However, choosing a viable etchant is difficult according to the relative corrosion rates given, and limits its application to certain materials. The etchant so far used has been very disadvantageous in that the silicon dioxide film on a silicon substrate is etched into a window. In the semiconductor industry, the scope of plasma erosion has so far been limited, which is probably the major factor. The purpose of this article is to report on the advantages of this technique, which greatly inhibits the corrosion of silicon and provides good control over the relative corrosion rates of silicon and silicon dioxide. Corrosion Process The glow discharge plasma is passed through a gas pump that uses a conventional pump to maintain a working pressure between 0.1 and 1 Torr