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利用直流磁控溅射(D.C.Magnetron Sputtering)法,选取总气压为80Pa,沉积时间为60min,溅射靶尺寸为φ80,在磁场强度、靶与基片之间的距离及Ar/O_2比等参数变化的情况下,制备了四组YBCO/Al_2O_3非晶薄膜样品。用MeV Li卢瑟福背散射(RBS)分析技术,测量了各块样品中Ba和Cu相对Y的含量和薄膜厚度随基片的横向分布。分析结果表明:在不同的沉积条件下,薄膜中各点的Ba和Cu相对浓度差别较大,薄膜厚度分布也不均匀。其中一组样品,在薄膜中心两侧约17mm的区间内,薄膜厚度近似相等(～0.13μm),而且Y,Ba,Cu比例接近1:2:3。
Using DC magnetron sputtering (DCMagnetron Sputtering) method, the total pressure of 80Pa, the deposition time of 60min, sputtering target size φ80, the magnetic field strength, the distance between the target and the substrate and Ar / O_2 ratio and other parameters Four YBCO / Al 2 O 3 amorphous thin films were prepared. The MeV Li Rutherford Backscattering (RBS) analysis technique was used to measure the relative Y content and film thickness of each sample in terms of the lateral distribution of the substrate. The analysis results show that under different deposition conditions, the relative concentrations of Ba and Cu at each point in the film differ greatly, and the film thickness distribution is also not uniform. In one of the samples, the film thickness is approximately equal (~ 0.13 μm) in the region of about 17 mm on both sides of the center of the film, and the ratio of Y, Ba and Cu approaches 1: 2: 3.