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The present paper introduces an experimental method for measuring the width of illuminated andshort-circuited Ni/a-Si:H Schotthy barriers.The current-voltage curves for the Schottky barriersolar cells under an AM1 illumination of 100 mW/cm~2 are calculated by using the parametersdetermined by experiments.The diffusion length of holes in a-Si:H obtained from the illuminatedⅠ-Ⅴ curve is consistent with the results measured by the author with the surface photovoltage methodin 1983.The factors affecting the fill factor are analysed on the basis of the calculated results.Acomparison of the calculated results to the experimental ones reveals that the very low fill factor ofthe solar cells measured is due to series and shunt resistances rather than the low diffusion length ofthe Loles.
The present paper introduces an experimental method for measuring the width of illuminated and short-circuited Ni / a-Si: H Schotthy barriers. The current-voltage curves for the Schottky barriersolar cells under an AM1 illumination of 100 mW / cm ~ 2 are calculated by using the parameters determined by experiments. The diffusion length of holes in a-Si: H obtained from the illuminatedⅠ-Ⅴ curve is consistent with the results measured by the author with the surface photovoltage methodin 1983.The factors affecting the fill factor are analyzed on the basis of the calculated results. A comparison of the calculated results to the experimental first reveals that the very low fill factor of the solar cells measured due due to series and shunt resistances rather than the low diffusion length of the Loles.