【摘 要】
：
Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydri
【机 构】
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Institute of High Pressure Physics PAS,
【出 处】
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Science China Technological Sciences
论文部分内容阅读
Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality,rate and mode of growth by HNPS method has been analyzed in details.
Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch, and smaller, GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality, rate and mode of growth by HNPS method has been analyzed in details.
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