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H-terminated DLC layers were synthesized on SiO 2 substrate by radio frequency (RF) magnetron plasma-enhanced chemical vapor deposition (PECVD) in a conventional reactor using C 4 H 10 as carbon source. As-deposited DLC films were characterized by Raman spectroscopy, scanning electron microscopy (SEM) as well as atomic force microscopy (AFM). The chemical reactivity of the obtained DLC surface was further investigated by exposing the photochemically oxidized DLC surface to a silane reagent. The course of the reaction was followed using water contact angle and X-ray photoelectron spectroscopy.
H-terminated DLC films were synthesized on SiO 2 substrate by radio frequency (RF) magnetron plasma-enhanced chemical vapor deposition (PECVD) in a conventional reactor using C 4 H 10 as carbon source. As-deposited DLC films were characterized by Raman spectroscopy The chemical reactivity of the obtained DLC surface was further investigated by exposing the photochemically oxidized DLC surface to a silane reagent. The course of the reaction was followed using water contact (AFM) angle and X-ray photoelectron spectroscopy.