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设计并制作了基于绝缘体上硅(SOI)材料的1×16阵列波导光栅(AWG)。该AWG器件的中心波长为1 550nm,信道间隔为200GHz,采用了脊型波导结构。首先确定了波导的结构尺寸以保证单模传输,并利用束传播法(BPM)模拟了波导间隔、弯曲半径和锥形波导长度等参数对器件性能的影响,对器件结构进行了优化,同时也利用BPM方法模拟了器件的传输谱。模拟结果显示:器件的最小信道损耗为4.64dB,串扰小于-30dB。根据优化的器件结构,通过光刻等半导体工艺制作了AWG,经测试得到AWG器件的损耗为4.52~8.1dB,串扰为17~20dB,能够实现良好的波分复用/解复用功能。
A 1 × 16 arrayed waveguide grating (AWG) based on silicon on insulator (SOI) material was designed and fabricated. The AWG device has a center wavelength of 1 550 nm and a channel spacing of 200 GHz, and has a ridge waveguide structure. Firstly, the size of the waveguide is determined to ensure the single-mode transmission. The beam propagation method (BPM) is used to simulate the influences of the parameters of the waveguide spacing, the bending radius and the length of the tapered waveguide on the performance of the device, and the device structure is optimized. The BPM method was used to simulate the transmission spectrum of the device. Simulation results show that: the minimum channel loss of the device is 4.64dB, crosstalk is less than-30dB. According to the optimized device structure, the AWG is manufactured by the semiconductor technology such as photolithography. The AWG device has a loss of 4.52 ~ 8.1dB and a crosstalk of 17 ~ 20dB, which can realize good wavelength division multiplexing / demultiplexing function.