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依据铝的电化学腐蚀特性,阐明了碱性条件下铝化学机械抛光(CMP)的机理。由于铝的硬度较低,在抛光过程中容易产生微划伤等缺陷,因此首先探索出适宜铝化学机械抛光的低压条件(4 psi,1 psi=6.895 kPa)。此外,提出两步抛光的方法,在抛光初期采用压力4 psi,抛光液由质量分数为40%的纳米级硅溶胶与去离子水(DIW)以体积比1∶1配制,氧化剂(H2O2)体积分数为1.5%,FA/O I型表面活性剂体积分数为1%,调节FA/OⅡ型螯合剂pH值为11.0,获得了较高的铝去除速率(341 nm/min)。在抛光后期采用低压1.45 psi,抛光液主要成分为体积分数5%的FA/O表面活性剂,并在较大体积流量(300 mL/min)的条件下进行抛光,充分利用表面活性剂的作用,对实验方案进行优化。采用优化后的实验方案,铝表面的划伤和缺陷显著减少。
Based on the electrochemical corrosion characteristics of aluminum, the mechanism of chemical mechanical polishing (CMP) under alkaline conditions is elucidated. Due to the lower hardness of aluminum, defects such as micro-scratches are prone to occur during the polishing process, so first explore the low pressure conditions (4 psi, 1 psi = 6.895 kPa) that are suitable for aluminum chemical mechanical polishing. In addition, a two-step polishing method was proposed. The pressure was 4 psi in the initial stage of polishing. The polishing solution was prepared by mixing 1% by volume of nanosized silica sol and DIW with a mass fraction of 40%. The volume of oxidant (H2O2) The fractional concentration of FA / OI surfactant was 1%, the pH value of FA / OⅡ chelator was 11.0, and the higher aluminum removal rate (341 nm / min) was obtained. A low pressure of 1.45 psi was used in the late polishing stage. The polishing slurry was mainly composed of 5% volume fraction of FA / O surfactant and polished at a high volume flow rate (300 mL / min) to fully utilize the surfactant effect , The experimental program to optimize. Using the optimized experimental scheme, scratches and defects on the aluminum surface are significantly reduced.