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利用应用材料公司外延设备,在Si(001)衬底上,通过RPCVD方式生长出完全应变、无位错的SiGe外延层。通过X射线衍射和原子力显微镜测试技术,得到了外延层Ge摩尔分数、外延层厚度、生长速率以及表面粗糙度等参数,研究了运用RPCVD方法制备的应变SiGe外延层的生长特性以及薄膜特性。结果表明,在660℃所生长的薄膜,其XRD图像均出现了Pendelossung条纹,表明薄膜质量较好。Ge摩尔分数高达16.5%。薄膜表面粗糙度RMS在0.3~0.6 nm。
Using the Applied Materials epitaxial device, a completely strained, dislocation-free SiGe epitaxial layer is grown on the Si (001) substrate by RPCVD. The parameters such as Ge mole fraction, epitaxial layer thickness, growth rate and surface roughness of epitaxial layer were obtained by X-ray diffraction and atomic force microscopy. The growth characteristics and film properties of strained SiGe epitaxial layer prepared by RPCVD method were studied. The results show that the films grown at 660 ℃ have Pendelossung fringes on the XRD images, indicating that the films are of good quality. Ge mole fraction of up to 16.5%. Film surface roughness RMS 0.3 ~ 0.6 nm.