高浓度臭氧超净水制备及在硅片清洗中的应用

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利用自主研发强电离放电的臭氧超净水产生系统,采用强电场电离放电把氧激发、电离,电离离解成O,O-,O+,O(1D)和O2(a1Δg)等活性粒子,它们进一步反应形成高浓度气态O3,再用强激励方法把气态O3高效率溶于超净水中形成高浓度臭氧超净水。实验结果表明,当强电离放电电场强度为96 k V/cm,放电功率为800 W,形成高浓度臭氧超净水反应时间为30 min时,臭氧超净水质量浓度达到34.2 mg/L,去除Fe,Cu和Al颗粒物效率达到90%以上,满足硅片清洗的要求,为硅片清洗提供了一种形成高浓度臭氧超净水新方法。 Oxygen, O (1D) and O2 (a1Δg) and other active particles were dissociated into oxygen, ionized and ionized by strong electric field ionization discharge. They were further developed by the self-developed ozone ultra-pure water production system with strong ionization discharge. The reaction forms a high concentration of gaseous O3, and then strong incentives to the high efficiency of gaseous O3 dissolved in ultra-clean water to form a high concentration of ozone ultra-clean water. The experimental results show that when the intensity of strong ionization discharge is 96 k V / cm and the discharge power is 800 W, the reaction time of high concentration ozone ultra pure water is 30 min, the concentration of ozone ultrapure water reaches 34.2 mg / L, The efficiencies of Fe, Cu and Al particles reach above 90%, which meets the requirements of silicon wafer cleaning and provides a new method for silicon wafer cleaning to form high-concentration ozone ultra-pure water.
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