大家知道,场效应功率晶体管要求共漏耐压必须是很高的。它取决于栅与漏间的耐压大小,若在栅和漏间制作高阻层,则不仅耐压变得非常高,而且也能提高跨导。另外,由于制作高阻层致使栅与漏间的杂散电容变小,因而也能提高高频性能。1950年日本就有人根据上述原理设计了一种类似于电子管的晶体管,可是由于当时工 As we all know, field-effect transistor requires leakage voltage must be high. It depends on the size of the breakdown voltage between the gate and the drain. If a high resistance layer is formed between the gate and the drain, not only the withstand voltage becomes very high, but also the transconductance can be improved. In addition, since the high-resistance layer is formed, the stray capacitance between the gate and the drain is reduced, so that the high-frequency performance can be improved. In 1950, some people in Japan designed a tube-like transistor based on the above principle. However,