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这是合同号NAS12—667的最后报告,完成于1969年5月。研究了用汽相淀积在硅和氧化硅上生长Al_2O_3。有关薄膜生长的重要参数,诸如衬底温度、原材料成分、衬底制备及携带气体均进行了研究。研究了淀积在原位热氧化或热解主长二氧化硅上的硅-介质的界面特性。所选择的特性测量包括热偏压处理前后的平带电荷密度、介电强度和薄膜的折射率。断定了Al_2O_3对一般杂质如P、B、Ga、Na的掩蔽能力。用在热氧化SiO_2上热解Al_2O_3的组合膜作为栅绝缘成功地制造了绝缘栅场效应晶体管(IGFET)并测量了电学特性。与用SiO_2作为栅绝缘的类似器件进行了比较。Al_2O_3—SiO_2提供了一定的优点,特别是使场效应晶体管具有较高的跨导。
This is the final report of Contract No. NAS12-667, completed in May 1969. The growth of Al 2 O 3 on silicon and silicon oxide was studied by vapor deposition. Important parameters related to film growth, such as substrate temperature, raw material composition, substrate preparation, and carrier gas, were investigated. The interfacial properties of silicon-dielectric deposited on in-situ thermally oxidized or pyrolyzed host silica were investigated. The selected property measurements include the flat charge density before and after thermal bias treatment, the dielectric strength and the refractive index of the film. The masking ability of Al 2 O 3 on common impurities such as P, B, Ga and Na was determined. Insulated gate field effect transistors (IGFETs) were successfully fabricated using a combination film of pyrolytically Al 2 O 3 on thermally oxidized SiO 2 as a gate insulator and the electrical characteristics were measured. A comparison was made with similar devices using SiO 2 as a gate insulator. Al 2 O 3 -SiO 2 provides certain advantages, in particular, the field-effect transistor has a high transconductance.