论文部分内容阅读
利用AES分析研究了经不同腐蚀所引起的n-(100)GaAS表面化学组分的差异,同时应用C-V法、I-V法和G-V法测量了在不同化学组分的n-GaAs表面上电镀形成的Ni/n-GaAs肖特基二极管的主要物理参数和Ni/n-GaAs的界面态的位置,俘获截面积及其界面态密度.研究结果表明,n～GaAs表面化学组分的不同直接影响肖特基势垒的高度、结的陡度、结附近载流子浓度分布、理想因子和饱和电流密度等.找到了最佳的腐蚀条件,获得了接近理想的肖特基结;同时还观察到Ni/n-GaAs界面中存在两种类型的界面态:其一界面态密度低,俘获截面积大;其二界面态密度高,俘获截面积小.这两种界面态与肖特基结的性能和势垒形成或费米能级钉扎密切相关.三种不同组分表面的Ni/n-GaAs界面费米能级钉扎的位置在禁带中几乎相同.
The differences of the chemical composition of the surface of n- (100) GaAS caused by different corrosion were studied by using AES. The CV, IV and GV methods were also used to measure the electroplating of n-GaAs on different chemical compositions The main physical parameters of Ni / n-GaAs Schottky diode and the interfacial states of Ni / n-GaAs, the cross-sectional area and the density of interfacial states were also investigated.The results show that the different chemical components of n ~ Tectonic barrier height, the junction of the steepness, junction near the carrier concentration distribution, ideality factor and saturation current density, etc .. Find the best corrosion conditions, access to nearly ideal Schottky junction; also observed There are two types of interface states in the Ni / n-GaAs interface: the first interface has a low density of states and a large cross-sectional area, the second has a high density of states and a small cross-sectional area. The performance is closely related to the barrier formation or Fermi level pinning.The Fermi level pinning positions of the Ni / n-GaAs interface on the three different component surfaces are almost the same in the forbidden band.