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本文报道了钽掺杂钌基厚膜电阻制备过程中导电相和玻璃相颗粒尺寸效应的实验研究结果。当导电相和玻璃相颗粒尺寸分别达到25和50nm时,电阻阻值和电阻温度系数也随之发生显著变化,并尝试根据厚膜电阻导电机理对其产生的原因进行定性的分析。
This paper reports the results of experimental studies on the grain size effect of conductive and glass phases in the preparation of tantalum-doped ruthenium-based thick film resistors. When the size of the conductive phase and the glass phase reaches 25 and 50 nm respectively, the resistance and the temperature coefficient of resistance also change significantly. At the same time, the reasons for the conductive layer and glass phase are analyzed qualitatively according to the conductive mechanism of thick film resistance.