论文部分内容阅读
研究了利用电子束反应蒸发技术梯度速率生长高迁移率In2O3:Mo(IMO)薄膜的微观结构、光学和电学性能。高纯度In2O3:MoO3陶瓷靶和O2作为源材料。首先,利用低沉积速率(约0.01nm/s)生长一层厚度约为30nm的IMO薄膜,作为缓冲层,其次,提高生长速率至0.04nm/s,高速率生长IMO薄膜,薄膜厚度约50nm。典型薄膜电阻率ρ约为2.5×10-4Ωcm,方块电阻Rs约为22.5Ω,载流子浓度n～5.8×1020cm-3,电子迁移率μ约为47.1cm2V-1s-1,可见光和近红外区域平均透过率约为80%。获得的IMO薄膜光电性能和直接利用低速率生长的薄膜特性相当或更好,并且极大地降低了薄膜生长时间。
The microstructure, optical and electrical properties of high mobility In2O3: Mo (IMO) thin films grown by electron beam reactive evaporation gradient technique were studied. High purity In2O3: MoO3 ceramic target and O2 as source material. First, an IMO film with a thickness of about 30 nm was grown as a buffer layer at a low deposition rate (about 0.01 nm / s). Secondly, an IMO film was grown at a high rate of about 50 nm by increasing the growth rate to 0.04 nm / s. Typical film resistivity ρ is about 2.5 × 10-4Ωcm, sheet resistance Rs is about 22.5Ω, carrier concentration n ~ 5.8 × 1020cm-3, electron mobility μ is about 47.1cm2V-1s-1, visible and near infrared The average regional transmission is about 80%. Obtained IMO film photoelectric properties and the direct use of low-rate growth of the film characteristics of the equivalent or better, and greatly reduce the film growth time.