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结合FET和一维微纳材料的优势,构筑了具有高灵敏度和低检测极限的FET式H2S气体传感器。研究结果发现,在室温条件下,器件对体积分数5×10–6至50×10–6的H2S具有良好的灵敏度和低检测极限(5×10–6)。相比于薄膜FET传感器,检测极限降至原来的1/20。与PMMA绝缘层比较研究结果显示:引起器件对H2S的高器件性能的原因主要归因于被暴露的导电沟道和微纳材料的性质。
Combining the advantages of FET and one-dimensional micro-nano materials, a FET-type H2S gas sensor with high sensitivity and low detection limit is constructed. The results show that the device has good sensitivity and low detection limit (5 × 10-6) to H2S with volume fraction of 5 × 10-6 to 50 × 10-6 at room temperature. Compared to the thin-film FET sensor, the detection limit dropped to 1/20. The results of the comparison with the PMMA insulating layer show that the reason for the high device performance of the device against H2S is mainly due to the properties of the exposed conductive channel and the micro / nano material.