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为了解决Cd_(0.9)Zn_(0.1)Te(CZT)晶体生长温度高、单晶率低、成分不均匀等问题,采用溶剂熔区移动法(THM)在优化工艺参数下生长了掺In的CZT晶体,在优化晶体的生长温度、固液界面处的温度梯度、原位退火过程等生长条件后,生长出直径为45 mm的低Te夹杂浓度、高电阻率、高透过率、均匀的高质量CZT晶体。X射线衍射结果显示,晶体的结晶性较好、Zn成分轴向偏析小。红外透过光谱测试结果显示,晶体内部的杂质、缺陷水平相对较少,晶体整体的红外透过率在60%左右。紫外-可见光吸收光谱测试结果也进一步表明,晶体的均匀性良好。采用红外显微镜对晶体内部的Te夹杂形貌及其尺寸进行观察,结果表明Te夹杂的尺寸主要分布在0~10μm之间。采用直流稳态光电导技术测得电子的迁移率寿命积约为8×10~(-4) cm~2/V。
In order to solve the problems of high growth temperature, low single crystal rate and nonuniform composition of Cd_ (0.9) Zn_ (0.1) Te (CZT) crystals, CZT doped with In was grown by optimizing the process parameters Crystal, a low Te inclusion concentration of 45 mm in diameter, high resistivity, high transmittance and uniform height were grown after optimizing the crystal growth temperature, the temperature gradient at the solid-liquid interface and the in-situ annealing process. Quality CZT crystals. X-ray diffraction results show that the crystallinity of the crystal is better, and the axial segregation of the Zn component is small. Infrared transmission spectrum test results show that the internal impurities in the crystal, the level of defects is relatively small, the overall crystal infrared transmittance of about 60%. UV-visible absorption spectroscopy test results further show that the crystal uniformity is good. The morphology and size of Te inclusions in the crystal were observed by infrared microscopy. The results show that the size of Te inclusions is mainly distributed between 0 ~ 10μm. The lifetime of electron mobility measured by DC steady - state photoconductive technique is about 8 × 10 -4 cm 2 / V.