通过优化ZnO缓冲层(buffer layer),有效地改善了由金属有机化学气相沉积(MOVCD)法制备的ZnO:B薄膜的光电特性。结果表明,“富氧”的缓冲层有效增加了ZnO:B-TCO的近红外区域透过率,使其更适应宽光谱薄膜太阳电池的发展要求。经过优化的ZnO:B,“类金字塔”状晶粒尺寸约300～500nm,波长550nm处绒度(haze)为10.8%,薄膜电子迁移率为20.7cm2/Vs,电阻率为2.14×10-3Ω.cm,载流子浓度为1.41×1020cm-3,且在400～1 500nm波长范围内的平均透过率为83%(含2mm厚玻璃衬底)。 By optimizing the ZnO buffer layer, the photoelectric properties of ZnO: B thin films prepared by metal organic chemical vapor deposition (MOVCD) method are effectively improved. The results show that the “oxygen-rich” buffer effectively increases the near-infrared transmittance of ZnO: B-TCO, making it more suitable for the development of wide-spectrum thin-film solar cells. Optimized ZnO: B, “pyramid” like grain size of about 300 ~ 500nm, wavelength 550nm haze of 10.8%, the film electron mobility of 20.7cm2 / Vs, the resistivity of 2.14 × 10 -3 Ω · cm, a carrier concentration of 1.41 × 10 20 cm -3, and an average transmittance of 83% (including a 2 mm-thick glass substrate) in the wavelength range of 400 to 1,500 nm.