采用磁控溅射方法制备了结构为IrMn/CoFe/AlOx/CoFe的磁性隧道结多层膜,样品置于真空磁场中进行退火处理.将在不同温度退火的磁隧道结结构多层膜置于负饱和场中等待,研究退火温度对样品热稳定性的影响.结果表明:退火提高了多层膜反铁磁层的单轴各向异性能,增加了样品的交换偏置;随着负饱和场等待时间的延长,被钉扎层的磁滞回线向正场偏移,交换偏置单调减小,但退火减弱了这种趋势. The magnetic tunnel junction multilayer films with the structure of IrMn / CoFe / AlOx / CoFe were prepared by magnetron sputtering and the samples were annealed in a vacuum magnetic field.The magnetic tunnel junction structure multilayer films annealed at different temperatures were placed The results show that annealing increases the uniaxial anisotropy of the antiferromagnetic layer and increases the exchange bias of the sample. With the increase of negative saturation As the field latency increases, the hysteresis loop of the pinned layer shifts to the positive field and the switching bias decreases monotonically, but the annealing weakens this trend.