本文讨论了珀耳帖效应对无序绝缘衬底上多晶硅激光再结晶的影响.在激光扫描的同时给样品通以电流,在固液界面处珀耳帖致冷和致热效应改变了温度分布和影响了结晶过程.实验结果表明,电流方向和激光扫描方向一致时的再结晶的晶粒比方向相反时或不通电流时大得多,并且单次扫迹的宽度增宽、沿着激光扫描方向的定向结晶增强.在适当的条件下,定向结晶可以占绝对优势. In this paper, the effect of Peltier effect on polysilicon laser recrystallization on a disordered insulating substrate is discussed.At the same time the laser scanning is applied to the sample, the cooling effect and the pyrogenic effect of the Peltier at the solid-liquid interface change the temperature distribution and Affecting the crystallization process.The experimental results show that when the current direction and the laser scanning direction coincide with the recrystallized grains when the opposite direction or no current flow is much larger and the width of a single trace broadening along the laser scanning direction Of the directional crystal enhancement.On the right conditions, the directional crystallization can dominate.