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采用直流离子束溅射法,在n型单晶硅衬底上淀积Si1-xGex薄膜。俄歇电子谱(AES)测得Si1-xGex薄膜的Ge含量约为0.15。对薄膜进行高温磷扩散后,经XRD测试为多晶态,即得n-poly-Si0.85Ge0.15。在n-poly-Si0.85Ge0.15上溅射一层薄的Co膜,做成Co/n-poly-Si0.85Ge0.15肖特基结样品。在90~332 K范围对未退火样品做I-V-T测试。研究发现,随着外加偏压增大,表观理想因子缓慢上升,肖特基势垒高度(SBH)下降。基于SBH的不均匀分布建模,得到了二者近似为线性负相关的结论。
Si1-xGex thin films were deposited on n-type monocrystalline silicon substrates by DC ion beam sputtering. The Ge content of the Si1-xGex thin film measured by Auger electron spectroscopy (AES) is about 0.15. After the film is diffused by high temperature phosphorus, the XRD test is polycrystalline state, that is n-poly-Si0.85Ge0.15. A thin Co film was sputtered on n-poly-Si0.85Ge0.15 as a Co / n-poly-Si0.85Ge0.15 Schottky junction. I-V-T test on unannealed samples in the range of 90 ~ 332 K. It is found that with the increase of applied bias, the apparent ideality factor increases slowly and the Schottky barrier height (SBH) decreases. Based on the non-uniform distribution model of SBH, the conclusion that the two are approximately linearly negatively correlated is obtained.