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采用质子轰击 n- Ga P晶体作为外部电光采样材料 ,用倍频移相扫描电光采样技术和反射式光路结构 ,对 ITO共面波导上的微波信号进行了测量 .结果表明 ,用质子轰击的方法可以使n- Ga P样品的电阻增大四个量级 ,接近于半绝缘材料 ,能有效地减小 Ga P晶体内部自由电荷对电场的屏蔽效应 .在 2 .30 GHz微波信号时 ,质子轰击 Ga P外部电光采样测量获得了 40 m V/Hz的电压灵敏度 .
The proton bombarded n-Ga P crystal was used as the external electro-optical sampling material, and the microwave signal on the ITO coplanar waveguide was measured by using the frequency doubling phase shift scanning electro-optical sampling technique and the reflective optical path structure.The results showed that the proton bombardment method Can make the resistance of n-Ga P sample increase by four orders of magnitude, which is close to the semi-insulating material, which can effectively reduce the shielding effect of the free charges inside the Ga P crystal on the electric field. At 2.30 GHz microwave signal, proton bombardment Ga P External Electro-Optical Sampling Measurements Achieve Voltage Sensitivity of 40 mV / Hz.