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本文根据RHX36、RHX37等IC的抗核加固器件,以抗中子和γ射线为主,采取提高IC设计余量,使电路增益在较宽的范围内都不致于影响IC的性能。在工艺中,依据不同IC,分别采取pn结和介质隔离,金属膜电阻,浅结扩散和缩小发射区周长等办法,从而使RHX36、RHX37等电路均能承受两次中子辐照(9.47×10~(13)/cm~2和9.65×10~(13)/cm~2)。
In this paper, based on RHX36, RHX37 and other IC anti-nuclear reinforcement devices to anti-neutron and γ-based, to improve the IC design margin, the circuit gain in a wide range will not affect the performance of the IC. In the process, according to different IC, respectively, to take pn junction and dielectric isolation, metal film resistance, shallow junction diffusion and reduce the emission area circumference and other methods, so RHX36, RHX37 and other circuits can withstand two neutron irradiation (9.47 × 10 ~ (13) / cm ~ 2 and 9.65 × 10 ~ (13) / cm ~ 2).