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通过水热的方法以退火0.5h的ZnO薄膜作为籽晶,得到垂直的ZnO纳米线。在X射线衍射谱中,除了Si的(400)衍射峰以外,只观察到了ZnO的(002)衍射峰。室温光致发光谱中出现了强的紫外发射峰,同时也伴随着弱的缺陷相关的发射。这些数据表明垂直的ZnO纳米线序列有着较好的晶体质量。同时,通过光泵浦也观察到了ZnO纳米线中的激光发射。当激发功率密度超过阈值且进一步增加时,出现了多模发射峰,其积分强度随着激发功率密度的增大呈非线性的增长,并且在96kW·cm~(-2)处能清晰地观察到从自发发射到激射的转变。
The hydrothermal method was used to anneal 0.5h ZnO thin film as a seed crystal to obtain vertical ZnO nanowires. In the X-ray diffraction spectrum, only the (002) diffraction peak of ZnO was observed except for the (400) diffraction peak of Si. A strong UV emission peak appears at room temperature photoluminescence, accompanied by a weak defect-related emission. These data show that the vertical ZnO nanowire sequences have better crystal quality. At the same time, laser emission in ZnO nanowires was also observed by optical pumping. When the excitation power density exceeds the threshold value and further increases, a multimode emission peak appears. The integral intensity increases nonlinearly with the increase of the excitation power density, and can be observed clearly at 96kW · cm ~ (-2) To the transition from spontaneous to lasing.