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高纯SiCl_4的分析包括杂质的富集和杂质的测定两个步骤。Kane和Larrabee曾综述过各种分析方法,近年来的主要进展是在杂质的测定上应用了ICP发射光谱法和原子吸收光谱法,使测定的准确度和灵敏度都有所改善。然而如同所有的高纯分析方法一样,遇到的主要限制仍然是环境、器皿和试剂的空白。 SiCl_4中杂质的富集方法Kane和Larrabee归结为
The analysis of high purity SiCl 4 includes the two steps of impurity enrichment and impurity determination. Kane and Larrabee reviewed a variety of analytical methods. Major advances in recent years have been the application of ICP emission spectroscopy and atomic absorption spectrometry to the determination of impurities to improve both the accuracy and the sensitivity of the assay. However, as with all high purity analytical methods, the main constraints encountered remain the absence of environment, vessels and reagents. The enrichment of impurities in SiCl 4 is summarized by Kane and Larrabee