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提出了一种基于半导体-金属相变材料和掩埋金属光栅结构的新型红外光开关。该结果由电磁场有限元方法计算得到。设计了在近红外波段表现出宽谱的、偏振选择的全光开关效应。掩埋金属光栅极大的提高了二氧化钒薄膜作为光开关的消光比,使得该结构在亚波长尺寸获得了高的消光比。结构的光学响应随入射角变化并不敏感。结构的透过、吸收特性可由结构参数进行调节。此设计在红外光通信、光计算以及军事探测、无损检测等领域具有潜在的应用。
A novel infrared light switch based on semiconductor-metal phase change material and buried metal grating structure is proposed. The result is calculated by the electromagnetic field finite element method. A wide-band, polarization-selective all-optical switching effect has been designed in the near infrared region. Buried metal gratings greatly enhance the extinction ratio of the vanadium dioxide film as an optical switch so that the structure achieves a high extinction ratio at subwavelength dimensions. The optical response of the structure is not sensitive to changes in incident angle. Structure through the absorption characteristics can be adjusted by the structural parameters. This design has potential applications in areas such as infrared communications, optical computing and military exploration, non-destructive testing.