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以WC 6 %Co为基体 ,采用磁控溅射法 ,在酸蚀后进行氢等离子体脱碳试样上制备Ti过渡层 ,然后碳化过渡层为TiC。在电子辅助热丝化学气相沉积装置中制备金刚石薄膜。研究碳化条件对金刚石薄膜与基体附着力的影响。结果表明 ,在 70 0℃左右的低温碳化 ,TiC结构致密 ,而在 85 0℃左右的高温碳化 ,TiC呈疏松的多孔组织 ,在CH4 Ar等离子体中碳化则 85 0℃左右仍能获得致密的TiC层。在致密的过渡层上沉积的金刚石薄膜具有更高的附着力
With WC 6% Co as the matrix, magnetron sputtering was used to prepare the Ti transition layer on the hydrogen plasma decarburized sample after acid etching, and then the TiC was carbonized. Diamond films were prepared in an electron assisted hot filament chemical vapor deposition apparatus. The effect of carbonation conditions on the adhesion of diamond film to substrate was studied. The results show that the structure of TiC is compact at low temperature of 70 ℃, while the porous TiC is loose at high temperature around 85 ℃. When the temperature is around 85 ℃, the dense TiC can be obtained by carbonization in CH4 Ar plasma TiC layer. Diamond films deposited on dense transition layers have higher adhesion