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传统激光器由于封装键合工艺的要求,需要较大的芯片电极面积,限制了器件尺寸进一步小型化。量子尺寸的衍射效应使量子阱半导体激光器的垂直结平面发散角较大,不利于光束整形,限制了半导体激光器的直接应用。为解决这些问题,采用加入模式扩展层的光波导结构,将垂直发散角由40°减小到22°左右;采用p与n电极同面的脊波导结构,可将激光器同载体直接烧结,无需键合工艺,减小了电极面积,进而缩小了芯片尺寸。25℃,60mA注入电流下进行测试,阈值电流Ith≤10mA,输出功率P约为55mW。
Conventional lasers require a larger chip electrode area due to the requirement of a package bonding process, which limits further miniaturization of the device size. The diffraction effect of the quantum size makes the vertical junction plane of the quantum well semiconductor laser have a wide divergence angle, which is disadvantageous to beam shaping, which limits the direct application of the semiconductor laser. In order to solve these problems, the optical waveguide structure with the mode extension layer is adopted to reduce the vertical divergence angle from 40 ° to 22 °. The ridge waveguide structure with the same surface of the p and n electrodes can directly sinter the laser with the carrier, Bonding process, reducing the electrode area, thus reducing the chip size. 25 ℃, 60mA injection current under the test, the threshold current Ith ≤ 10mA, the output power P is about 55mW.