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我们发现含氮CZ-Si单晶中N-N对具有独特的等时退火行为,可划分成如下三个阶段:在400—600℃温区,N-N对的等时退火行为是不可逆的,而600—800℃温区是可逆的,大于800℃氮开始产生沉淀.我们还发现450℃预处理可加速在高温时氮的沉淀速率.本文对上述实验结果给予详细的讨论.
We found that NN pairs in nitrogen-containing CZ-Si single crystals have unique isochronal annealing behavior and can be divided into three phases as follows: In the temperature range of 400-600 ℃, the isochronal annealing behavior of NN pairs is irreversible, 800 ℃ temperature region is reversible, more than 800 ℃ nitrogen began to precipitate.We also found that 450 ℃ pretreatment can speed up the precipitation rate of nitrogen at high temperature.In this paper, the above experimental results are discussed in detail.