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研究 Sol- gel制备 PZT薄膜材料相结构与晶格参数 ,研究 PZT薄膜相变、衬底与温度关系和不同 Zr/ Ti比Pb(Zrx Ti1-x) O3 (x=0 .2～ 0 .8)。结果表明 :PZT薄膜从烧绿石相向钙钛矿相转变的温度在 Pt衬底上为 6 0 0°C,在不锈钢上为 6 50°C。PZT铁电体薄膜的晶格参数和晶格畸变随 Zr/ Ti比的不同而变化 ;在铁电四方相区 ,随 Zr含量增加 ,a=b轴逐渐增大 ,c轴稍有缩短 ,四方晶系发生畸变 ;当 x>0 .5时 ,没有检测到单位晶胞的畸变 ;在准同型相界附近 ,晶胞参数发生突变。
The phase structure and lattice parameters of PZT thin films were investigated by Sol-gel. The phase transitions of PZT thin films, the relationship between substrate and temperature, and the relationship between the Zr / Ti ratio Pb (Zrx Ti1-x) O3 (x = 0.2 ~ 0.8 ). The results show that the temperature of PZT thin film from pyrochlore phase to perovskite phase is 600 ℃ on Pt substrate and 6 50 ° C on stainless steel. The lattice parameters and lattice distortion of PZT ferroelectric thin films vary with the Zr / Ti ratio. In the ferroelectric tetragonal phase region, with the increase of Zr content, the a = b axis gradually increases and the c axis slightly shortens. The square The crystal system is distorted. When x> 0.5, no unit cell distortion is detected. In the vicinity of the quasi-homophase boundary, the unit cell parameters are changed.