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对NPN双极晶体管进行了不同剂量率、不同偏置条件下的电离辐射实验。研究结果表明:同一剂量率辐照时,无论是低剂量率还是高剂量率,辐照损伤均是基-射结反向偏置时最大,零偏置次之,正偏置最小。NPN双极晶体管在3种偏置下均可观察到明显的低剂量率辐照损伤增强(ELDRS)效应,且偏置条件对ELDRS效应很明显,表现为基-射结正向偏置ELDRS效应最为显著,零偏次之,反向偏置最次。对出现这一实验结果的机理进行了探讨。
The NPN bipolar transistor under different dose rates, ionizing radiation experiments under different bias conditions. The results show that at the same dose rate, both the low dose rate and the high dose rate, the irradiation damage is the largest when the base-emitter junction is reverse-biased, followed by the zero-bias and the smallest positive bias. NPN Bipolar Transistors showed obvious low dose rate radiation damage enhancement (ELDRS) effects under all three biases, and the bias condition had an obvious effect on ELDRS, which showed that the base-emitter forward bias ELDRS effect The most significant, zero bias times, reverse bias the most. The mechanism of this experimental result is discussed.