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Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050℃ to 1100℃. The main factors affecting the quality of the γ-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100)// sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.
Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase γ-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE The main factors affecting the quality of the γ-LiAlO2 layers were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating γ-LiAlO2 (100) // sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.