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阐述了50~110nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成,每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比,这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50nm处高反射多层膜,并以此为初始条件通过Levenberg-Marquart优化方法完成了50~110nm强吸收波段宽带高反射率Si/W/Co多层膜的设计,其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试,测试结果表明制作出的多层膜结构与设计结构基本相符.
The design method of the sub-quarter-wavelength multi-layer film in the 50-110 nm absorption band is described. The film system is formed by superposition of strong absorbing materials with the optical thickness of each layer being less than a quarter wavelength, This kind of film is more suitable for enhancing the reflectivity in the strong absorption band than the multilayer film.With this method, a 50nm high reflection multilayer film was designed and used as the initial condition to finish the 50 ~ The average reflectivity of Si / W / Co multilayer film with high absorption band of 110nm was designed to 45% .A multilayer Si / W / Co multilayer film was prepared by direct current magnetron sputtering and characterized by X-ray diffraction (XRD) were used to test the film structure. The test results show that the structure of the multi-layer film is basically consistent with the designed structure.