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制作了截止频率ft和最高震荡频率fmax分别为46.2和107.8 GHz的AlGaN/GaN高电子迁移率晶体管,并针对该器件建立了包含微分电阻Rfd和Rfs在内的18元件小信号等效电路模型;在传统的冷场条件提取器件寄生参数的基础上,通过对不同栅压偏置下冷场Z参数进行线性插值运算,可消除沟道分布电阻和栅极泄漏电流对寄生电阻的影响;再利用热场S参数对寄生参数部分进行去嵌,可提取得到本征参数。分析表明,此模型和算法提高了模型拟合精度,S参数的仿真结果与测试数据在200MHz到40GHz的频率范围内均符合很好,误差不到2%。
An AlGaN / GaN HEMT with a cutoff frequency ft and a maximum oscillation frequency fmax of 46.2 and 107.8 GHz respectively was fabricated. An 18-channel small-signal equivalent circuit model including differential resistances Rfd and Rfs was established for the device. Based on the parasitic parameters of the traditional cold-field condition extraction device, the influence of the channel resistance and the gate leakage current on the parasitic resistance can be eliminated by linear interpolation of the Z-parameter of the cold-field under different grid voltage bias. The S parameters de-embed the parasitic parameters and extract the intrinsic parameters. The analysis shows that the model and the algorithm improve the model fitting accuracy. The simulation results and test data of S parameter are in good agreement with the test data within the frequency range from 200MHz to 40GHz with error less than 2%.