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采用磁过滤阴极脉冲真空弧沉积技术(pulsed filtered cathodic vacuum arc deposition,PFCVAD),以Si(100)单晶片为衬底,在衬底温度400℃、氧气压力4×10-2Pa、靶负压400 V的条件下制备了具有c轴取向的ZnO薄膜。采用原子力显微镜(AFM)和X射线衍射仪(XRD)研究了退火温度对ZnO薄膜结构和内应变的影响。研究结果表明:由于薄膜制备过程中的“atom peening”机制导致大量的原子被束缚于非平衡位置,未退火的ZnO薄膜呈压应力;薄膜压应力随退火温度的升高而降低,当退火温度升高至约530℃,薄膜的内应变由压应力转变为张应力;升高退火温度还促进了ZnO薄膜晶粒生长。为通过退火控制PFCVAD制备的ZnO薄膜内应变提供了依据。
The PFCVAD was used as a substrate to fabricate Si (100) single crystal substrate at a substrate temperature of 400 ℃, an oxygen pressure of 4 × 10-2Pa and a target negative pressure of 400 V under the conditions of preparation of a c-axis oriented ZnO film. The effects of annealing temperature on the structure and internal strain of ZnO thin films were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that the un-annealed ZnO films are compressive due to a large number of atoms bound to non-equilibrium sites due to the “atom peening” mechanism in the film preparation process. The compressive stress of the films decreases with the annealing temperature increasing. The annealing temperature increases to about 530 ℃. The internal strain of the film changes from compressive stress to tensile stress. Increasing the annealing temperature also promotes the grain growth of ZnO thin films. It provides a basis for annealing the ZnO thin films prepared by PFCVAD.