论文部分内容阅读
Y99-61590-147 0001116根据电测试参数对双多晶硅双极晶体管 AC 性能预测的实验=Prediction of AC performance of double-polysil-icon bipolar transistors ftom E-test parameters:an exper-iment[会,英]/Kelly.S.C.& Griffith,E.C.//1998IEEE International Conference on Microeleetronic TestStructures.—147～152(AZ)因为双极器件工作过度的快速增长,所以必须对射频应用的硅双极和 BiCMOS 工艺的 AC 特性进行分析。与 AC 表征与模拟有关的数据获取和参数抽取步骤既耗时又乏味,并且作为部分标准工艺监测程序测
Y99-61590-147 0001116 Prediction of AC performance of double-polysil-icon bipolar transistors ftom E-test parameters: an exper-iment / Kelly, SC & Griffith, EC // 1998 IEEE International Conference on Microeleetronic Test Structures. 147-152 (AZ) Because bipolar devices are overworking rapidly, the AC characteristics of silicon bipolar and BiCMOS processes for RF applications must be analyzed . AC characterization and simulation-related data acquisition and parameter extraction steps are time-consuming and tedious, and as part of the standard process monitoring program