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为了在LED和光纤之间获得最大耦合,通常要用某种形式的透镜系统,最好的结构是利用半导体器件本身形成的集成透镜。以前曾用腐蚀或把光致抗蚀剂的形状转移到半导体上,用离子铣的方法研制了这种透镜。为了在晶片中的InP/InGaAsP LED的上方形成集成透镜,本文介绍一种新颖、简单、而又可重复生产的光电化学(PEC)工艺。这一工艺是利用在适当的电解液中,光生空穴分解n-InP的反应: InP+5h~+→In(111)+P(111)+e~-腐蚀速率正比于光强度,适当设计投射到半
In order to obtain maximum coupling between the LED and the optical fiber, it is common to use some form of lens system, the best of which is to use an integrated lens formed by the semiconductor device itself. Previously, the lens was developed by ion milling using etching or the transfer of photoresist to a semiconductor. In order to form an integrated lens over an InP / InGaAsP LED in a wafer, this article presents a novel, simple, yet reproducible, photoelectrochemical (PEC) process. This process utilizes the reaction of photogenerated holes with n-InP in an appropriate electrolyte: InP + 5h + + In (111) + P (111) + e ~ The corrosion rate is proportional to the light intensity and is properly designed Projected to half