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利用变角 X射线光电子能谱 (XPS)及其层状结构的计算程序分析和计算 Ga As(1 0 0 )在60 0— 675℃热退火处理后表面组分 /深度的定量变化 .在 Ga As表面氧化物与衬底之间存在一过渡层 ,即弛豫层 ,该层在自然情况下为富 As的结构 ,经 60 0℃以上的温度退火后 ,成为富 Ga的结构 .实验和计算发现该层的厚度和 Ga的相对含量随退火温度增加而增大 ,即弛豫层中的Ga含量由 53.4%变为 62 .1 % ,弛豫层厚度由 1 .3nm变为 2 .2 nm.
The quantitative changes of surface composition / depth after GaAs (100) thermal annealing at 60 0- 675 ° C were analyzed and calculated by using variable angle X-ray photoelectron spectroscopy (XPS) and its layered structure calculation program. There is a transition layer between the As surface oxide and the substrate, that is, relaxation layer, which is a As-rich structure in nature and becomes a Ga-rich structure after being annealed at a temperature above 600 ° C. Experiments and calculations It is found that the thickness of the layer and the relative content of Ga increase with annealing temperature, that is, the content of Ga in the relaxed layer changes from 53.4% to 62.1%, and the thickness of the relaxed layer changes from 1.3 nm to 2.2 nm .