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采用2μm设计规则,在2μm工艺线上,成功研制了1 024×1 024全帧CCD器件。该1 024×1 024全帧CCD器件的有效像元数为1 024×1 024,像元尺寸为11μm×11μm,有效光敏面积为11.3mm×11.3mm,光响应波长范围为400～1 100nm。成像区域横向分为2个区,纵向分为2个区,可由1路、2路和4路输出,有9种读出模式。该器件具有2×2的像元合并功能,能作为512×512(像元尺寸为22μm×22μm)和规格的器件使用。该器件数据速率为4×40M,数据速率高。器件采用MPP工作模式,暗电流低;采用薄栅氧化,具有100krad(Si)抗辐照能力;适合在高温、辐照环境和微光环境下成像应用。
Using 2μm design rules, in the 2μm process line, successfully developed a 1024 × 1 024 full-frame CCD devices. The 1 024 × 1 024 full-frame CCD device has an effective pixel count of 1024 × 1024, a pixel size of 11μm × 11μm, an effective photosensitive area of 11.3mm × 11.3mm and a light response wavelength of 400 to 1 100nm. The imaging area is divided into 2 areas laterally and divided vertically into 2 areas, which can be output by 1, 2 and 4 outputs and has 9 readout modes. The device features 2 × 2 pixel binning and can be used as a 512 × 512 (cell size 22μm × 22μm) and device specifications. The device data rate of 4 × 40M, high data rates. The device features MPP mode of operation with low dark current; thin-film oxidation with 100krad (Si) radiation resistance; suitable for imaging applications in high temperature, radiation and low light environments.