一、前言半导体材料电学参数的测量往往是费时而繁锁的,尤其是变温测量和锭条测量。对于变温测量,通常需测十几个温度点,并且因等待升温和恒温,一般需要好几个小时。锭条测量也很费时,例如我们的InSb多晶锭条,长32cm,要完成一根锭条的测量,相当于完成32片样品的常规测量,因此测完一根InSb锭条也需要几小时。为了将过去 I. INTRODUCTION The measurement of electrical parameters of semiconductor materials is often time-consuming and cumbersome, especially in variable temperature measurement and ingot measurement. For the temperature measurement, usually measured a dozen temperature points, and because of waiting for the temperature and temperature, usually takes several hours. The ingot measurement is also time-consuming. For example, our InSb polycrystalline ingot, 32 cm long, measures one ingot, which is equivalent to completing a regular measurement of 32 samples. It takes several hours to measure an InSb ingot . In order to pass the past