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用扫描电镜电子束感生电流法研究了GaInAsP/InP双异质结液相外延片的P-n结偏位问题。认为Zn沾污是偏位的主要原因。用控制掺杂浓度,Mg掺杂,均可制得正确的P-n结。用电化学C—V法测试了部分样品。与制管后发射光谱进行了比较,结果相同。
The P-n junction misalignment of GaInAsP / InP double heterojunction liquid crystal epitaxial wafers was investigated by scanning electron microscopy (SEM) electron beam induced current method. Zn staining is the main reason for the deviation. With the control of doping concentration, Mg doping, can be obtained the correct P-n junction. Some samples were tested by electrochemical C-V method. Compared with the tube emission spectrum, the results are the same.