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对一种硅谐振式压力微传感器敏感结构的边界结构参数进行了优化设计。所讨论的敏感结构以方形硅膜片作为一次敏感元件，直接感受被测压力。在膜片的上表面制作浅槽和硅梁，以硅梁作为二次敏感元件，间接感受被测压力。为减少敏感结构内外能量耦合，提高振子的Ｑ值，采用有限元仿真分析的方法，优化敏感边界结构参数。
The boundary structure parameters of a silicon resonant pressure micro-sensor-sensitive structure are optimized. The sensitive structure in question uses square silicon diaphragm as a sensitive element to directly sense the measured pressure. In the diaphragm on the surface of the shallow groove and the production of silicon beams to silicon beams as the second sensor, indirectly feel the measured pressure. In order to reduce the energy coupling inside and outside the sensitive structure and improve the Q value of the vibrator, finite element simulation analysis method is used to optimize the parameters of the sensitive boundary structure.