在集成电路结构中,广泛采用铝作为互连线。随着大规模和超大规模集成电路的发展,同对其它结构层的要求一样,需要对铝膜进行窄线条小间距的精细蚀刻;此外,作为互连线,必须保持一定的电流容量,因而要求Al条具有较小的宽度与厚度比。显然,常规的湿法化学腐蚀是不能满足这些要求的。因此,近几年来,许多人对铝的干法腐蚀进行了广泛的探索,以寻求适用于高集成度的电路中铝刻蚀的理想工艺。 目前研究的干法工艺中有离子束腐蚀、射频溅射腐蚀,反应离子腐蚀(或称反应溅射腐蚀)和等离子腐蚀等四种。前两种方法由于设备庞大复杂,腐蚀速率小,选择性差,离子轰击损伤大等缺点,因而较少采用。报导较多并有成熟 In the integrated circuit structure, aluminum is widely used as an interconnect. With the development of large-scale and very large-scale integrated circuits, as with the requirements of other structural layers, fine etching of aluminum thin films with small line spacing is required; in addition, a certain current capacity must be maintained as an interconnection line, Al strip has a smaller width to thickness ratio. Obviously, conventional wet chemical etching can not meet these requirements. In recent years, therefore, many have made extensive explorations of dry-etching of aluminum to find the ideal process for aluminum etching in highly integrated circuits. There are four kinds of dry process currently studied: ion beam etching, RF sputtering, reactive ion etching (or reactive sputter etching) and plasma etching. The first two methods due to the large complex equipment, small corrosion rate, poor selectivity, ion bombardment damage and other shortcomings, and therefore less used. Reported more and mature