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本文提出了硅中氧沉淀成核速率的测定方法并用该法测定了650—950℃温度区间的氧沉淀成核速率,为设计优化本征吸收工艺提供了可靠依据。
In this paper, the determination method of nucleation rate of oxygen precipitation in silicon was proposed and the nucleation rate of oxygen precipitation in the temperature range of 650-950 ℃ was determined by this method, which provided a reliable basis for the design and optimization of intrinsic absorption process.